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National Repository of Grey Literature 2 records found  Search took 0.00 seconds. 
Analysis of locally modified surfaces for selective growth of cobalt
 Krajňák, Tomáš ; Bábor, Petr (referee) ; Čechal, Jan (advisor)
In this thesis the chemical composition of silicon substrates locally modified by focused gallium ion beam by X-ray photoelectron spectroscopy is determined. In order to determine the influence of focused ion beam, the sample comprising sputtered square areas with nominal depths in range of 1 to 10 nm was prepared. Next, the sample was heated to elevated temperatures (500 - 700 °C) to reveal changes in the sputtered areas induced by annealing. In this work by X-ray photoelectron spectrometer Kratos Supra and electron microscope Tescan LYRA3 with focused ion beam were used. From the measured spectra of the Si 2p and Ga 2p3/2 peaks measured as a function of nominal sputtering depth and annealing temperature the following main observations were obtained. First, there is the additional peak component in the Si 2p peak, which can be assigned to the amorphous silicon. The second important finding is that gallium can be removed from near surface volume by annealing at temperatures beyond 700 °C.
Detailed record
Analysis of locally modified surfaces for selective growth of cobalt
 Krajňák, Tomáš ; Bábor, Petr (referee) ; Čechal, Jan (advisor)
In this thesis the chemical composition of silicon substrates locally modified by focused gallium ion beam by X-ray photoelectron spectroscopy is determined. In order to determine the influence of focused ion beam, the sample comprising sputtered square areas with nominal depths in range of 1 to 10 nm was prepared. Next, the sample was heated to elevated temperatures (500 - 700 °C) to reveal changes in the sputtered areas induced by annealing. In this work by X-ray photoelectron spectrometer Kratos Supra and electron microscope Tescan LYRA3 with focused ion beam were used. From the measured spectra of the Si 2p and Ga 2p3/2 peaks measured as a function of nominal sputtering depth and annealing temperature the following main observations were obtained. First, there is the additional peak component in the Si 2p peak, which can be assigned to the amorphous silicon. The second important finding is that gallium can be removed from near surface volume by annealing at temperatures beyond 700 °C.
Detailed record

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